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Dynamic Random-access Memory (DRAM)

DDR3 SDRAM, 128X16, 2GB, DDR3-1333, SO-DIMM Technical  Data
Type DDR3-1333
RAM timing DDR3-1333 CL=11, trcd=11,trp=11
Storage capacity 2GB
Chip type Samsung
Chip structure 128Mx16
Number of chips 16
SPD Available
ECC N/A
BUFFER N/A
Operating temperature 0ºC~ 55ºC
Operating humidity Relative humidity: 10%—90%
Storage temperature -50ºC~ 100ºC
Storage humidity Relative humidity: 5%—95%
Operating pressure 69—105KPa
SPD compliance to JEDEC “Annex K: Serial Presence Detect (SPD) for DDR3 SDRAM ModulesDDR3 SPD SODIMM Revision 1.1"
DDR3 SDRAM, 256X16, 4GB, DDR3-1600, SO-DIMM Technical  Data
Type DDR3-1600
RAM timing DDR3-1600 CL=11, trcd=11,trp=11
Storage capacity 4GB
Chip type Samsung
Chip structure 256Mx16
Number of chips 16
SPD Available
ECC N/A
BUFFER N/A
Operating temperature 0ºC~ 55ºC
Operating humidity Relative humidity: 10%—90%
Storage temperature -50ºC~ 100ºC
Storage humidity Relative humidity: 5%—95%
Operating pressure 69—105KPa
SPD compliance to JEDEC “Annex K: Serial Presence Detect (SPD) for DDR3 SDRAM ModulesDDR3 SPD SODIMM Revision 1.1"

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