635nm Laser Diode Component

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Features
MQW 635nm FP LD
High output power
Low threshold current
Built-in InGaAsP monitor PD
Wide temperature range operation (Tc= -10 to+65°C)

Applications

Light Source

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
LD Forward Current	IF(LD)	200	mA
LD Reverse Voltage	VR(LD)	2	V
PD Forward Current	IF(PD)	2	mA
PD Reverse Voltage	VR(PD)	25	V
Operating Temperature	TOP(LD)	-10 ～ +60	℃
Storage Temperature	TST	-40 ～ +80	℃
Soldering Temperature/Time	-	240/10	℃/S

Optical & Electrical Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit
Output Power	Po	1	-	20	mW
Operating Current	Iop	30	-	140	mA
Operating Voltage	Vop	-	2.2	2.8	V
Center Wavelength	λ	630	635	640	nm
Spectral Width	Δλ	-	-	4	nm
Monitor Current	Im	0.1	0.2	0.5	mA
Rise/ Fall Time	Tr/Tf	-	-	0.5	ns

PIN Definition

Drawing

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