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60mw-80mw 1310nm Pulse Laser Diode

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The 60mw-80mw 1310nm pulse laser diode uses an internationally known brand name chip, and features a maximum output power of 130mw. It is often used in OTDR systems.

Absolute Maximum Ratings
Parameter Symbol Min. Max. Unit
Pulsed Forward Current IFP 750 mA
Reverse Voltage VR 2 V
Reverse Voltage (monitor PD) VRM 10 V
Reverse Current (monitor PD) IFPM 2 mA
Operating Temperature TC 0 60 °C
Storage Temperature Tstg -40 85 °C
Lead Soldering Temperature Tsld 260(10s) °c
Relative Humidity (Noncoagulable) RH 85 %
Optical & Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Notes
Forward Voltage VFP 3.5 V IFP = 450 mA, PW = 10 μs, Duty = 1%
Threshold Current Ith 10 15 mA
Optical Output Power From SM Fiber Pf 20 80 mW IFP =450 mA, PW = 10 μs, Duty = 1%
Center Wavelength λc 1290 1310 1330 nm PW = 10 μs, Duty = 1%
Spectral Width σ 4 nm RMS (-3 dB)
Rise Time tr 0.5 2.0 ns 10-90%
Fall Time tf 0.5 2.0 ns 90-10%
Monitor Current Im 0.05 2 mA VRM = 2V

As an experienced FP pulsed diode laser (for OTDR system) manufacturer and supplier in China, our company also offers 8-10mw 1653.5nm Butterfly Laser Diode for gas detection, butterfly fiber coupled laser diodes, Pin TIA receiver, and more.

60mw-80mw 1310nm Pulse Laser Diode
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Links：https://www.globefindpro.com/products/24844.html
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