Industrial Cable Manufacturer

Application

GaAs photodetectors are mainly used in optical communication, active optical cables, USB and HDMI.

Specification

Item	Symbol	Min	Normal	Max	Unit	Notes
Responsivity	R	0.5	0.6		A/W	V=-1.5V λ=850nm
Absorption zone	D		70		um
Bandwidth	F3dB		9		GHz	V=-3V
Capacitance	C		0.2	0.25	pF	V=-1.5V
Dark current	Id		0.1	0.5	nA	V=-1.5
Wavelength	λ	800	850	860	nm
Breakdown Voltage	Vbd	40			Volt	I=1uA

Extreme operation condition

Item	Symbol	Min	Normal	Max	Unit	Notes
Forward current	If			10	mA
Reserve voltage	Vr			30	V
Operation temperature	Top	-40		85	℃
Storage temperature	Ts			100	℃

Feature
The GaAs photodetector will manage transmission speeds at a gigabit level. There is a 70μm absorption zone. There is an 850nm anti-reflection layer structure. The positive and negative electrodes are on the front side. All features are stable and homogeneously distributed. The GaAs photodetector is watertight and there is no need for sealing. Various designs are available, from single chips to multiple types of matrix chips.