10A-2 Schottky Diode

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Features
1. Owing to the patented barrier technology, our 10A Schottky diode is able to offer reliable performance even when the junction temperature rises up to 110°C.
2. Our product shows a low reverse leakage at high temperature.
3. It is suitable for converters, free wheeling diodes, switching power supplies, reverse battery protections and more.

Absolute Maximum Ratings (TA=25℃)

Parameter	Symbol	Value	Unit
Peak repetitive reverse voltage	VRRM	200	V
Average rectified forward current	IF(AV)	10	A
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method)	IFSM	120	A
Max. operating junction temperature	TJ	110	℃
Storage temperature range	TSTG	-45 to 150	℃

Electrical Characteristics (TA=25℃)

Parameter	Symbol	Test condition	Min.	Typical	Max.	Unit
Peak repetitive reverse voltageWorking peak reverse voltage DC blocking voltage	VRRM VRWM VR	-	-	200	-	V
Average rectified output current	IO	@ TC=105℃	-	10	-	V
Non-repetitive peak forward surge current 8.3ms single half sine-wave superimpose on rated load (JEDEC method)	IFSM	-	-	120	-	A
Forward voltage drop	VF	@ IF=5.0A, TC=105℃ @ IF=5.0A, TC=25℃	-	0.870.99	-	V
Peak reverse current at rated VR	IR	@ TC=25℃ @ TC=125℃	-	0.2 5.0	-	mA
Typical junction capacitance	CJ	-	-	150	-	pF

Related Names
MOSFET Diode | High Voltage Rectifier Diode | Junction Diode

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