20A-2 Schotthy Diode

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The 20A Schotthy diode is manufactured adopting our patented barrier technology, making it workable under a high junction temperature, technically speaking, 110°C. Furthermore, it also has low reverse leakage at high temperatures. Thanks to these properties, our product is applicable for converters, switching power supplies, free wheeling diodes, reverse battery protections and more.

Absolute Maximum Ratings (TA=25℃)

Parameter	Symbol	Value	Unit
Peak repetitive reverse voltage	VRRM	200	V
Average rectified forward current	IF(AV)	20	A
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method)	IFSM	280	A
Max. operating junction temperature	TJ	110	℃
Storage temperature range	TSTG	-45 to 150	℃

Electrical Characteristics (TA=25℃)

Parameter	Symbol	Test condition	Min.	Typical	Max.	Unit
Peak repetitive reverse voltageWorking peak reverse voltage DC blocking voltage	VRRMVRWMVR	-	-	200	-	V
Average rectified output current	IO	@ TC=105℃	-	20	-	A
Non-repetitive peak forward surge current 8.3ms single half sine-wave superimpose on rated load (JEDEC method)	IFSM	-	-	280	-	A
Forward voltage drop	VF	@ IF=10.0A, TC=125℃@ IF=10.0A, TC=25℃	-	0.800.95	-	V
Peak reverse current at rated VR	IR	@ TC=25℃@ TC=125℃	-	0.0515	-	mA
Typical junction capacitance	CJ	-	-	150	-	pF

Related Names
Schottky Barrier Photodiode | Step Recovery Diode | Low Capacitance Diode

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