A9 Complementary Silicon Power Darlington Transistor

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The complementary silicon power Darlington transistor is designed for amplifiers and other general purpose applications. The first part is a silicon epitaxial base NPN power transistor in monolithic Darlington configuration, while the second part is the complementary PNP transistor. In addition, this product is packaged in a TO-3 metal case.

A9 Complementary Silicon Power Darlington Transistor

Absolute Maximum Ratings (TA=25℃)

Parameter	Symbol	Value	Unit
Collector-base voltage	VCBO	100	V
Collector-emitter voltage	VCEO	100	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	16	A
Base current	IB	0.5	A
Total power dissipation	Ptot	150	W
Max. operating junction temperature	TJ	150	℃
Storage temperature	TSTG	-55 to 150	℃

Electrical Characteristics (TA=25℃)

Parameter	Symbol	Test condition	Min.	Typ.	Max.	Unit
Collector cutoff current	ICEO	VCE=100V, IB=0	-	-	3.0	mA
Collector cutoff current	ICBO	VCB=100V, IE=0	-	-	1.0	mA
Emitter cutoff current	IEBO	VEB=5V, IC=0	-	-	5.0	mA
Collector-emitter sustaining voltage	VCEO(sus)	IC=30mA, IB=0	100	-	-	V
DC current gain	hFE(1)	VCE=3V, IC=3.0A	1000	-	20000
DC current gain	hFE(2)	VCE=3V, IC=10A	1000	-	-
Collector-emitter saturation voltage	VCE(sat)	IC=10A, IB=40mA	-	-	2.5	V
Collector-emitter saturation voltage	VCE(sat)	IC=16A, IB=80mA	-	-	4.0	V
Base-emitter on voltage	VBE(on)	VCE=3.0V, IC=10A	-	-	3.0	V

Related Names
Darlington Pair | Power Switching Transistor | Bipolar Junction Transistor

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