A12 Silicon NPN Power Transistor

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The silicon NPN power transistor is encapsulated in a plastic package, and it is mainly used for high speed power switching circuits.

Absolute Maximum Ratings (TA=25℃) Parameter

Parameter	Symbol	Value	Unit
Collector-base voltage	VCBO	700	V
Collector-emitter voltage	VCEO	400	V
Emitter-base voltage	VEBO	9	V
Collector current	IC	8.0	A
Base current	IB	4	A
Total power dissipation	Ptot	80	W
Max. operating junction temperature	TJ	150	℃

Electrical Characteristics (TA=25℃)

Parameter	Symbol	Test condition	Min.	Typ.	Max.	Unit
Collector cutoff current	ICBO	VCE=700V, IE=0	-	-	1.0	mA
Emitter cutoff current	IEBO	VEB=9V, IC=0	-	-	1.0	mA
Collector-emitter sustaining voltage	VCEO(sus)	IC=10mA, IB=0	400	-	-	V
DC current gain	hFE(1)	VCE=5V, IC=2.0A	8	-	40	-
DC current gain	hFE(2)	VCE=5V, IC=2.0A	6	-	30	-
Collector-emitter saturation voltage	VCE(sat)	IC=8.0A, IB=2.0A	-	-	3.0	V
Collector-emitter saturation voltage	VCE(sat)	IC=5.0A, IB=1.0A	-	-	1.5	V
Base-emitter saturation voltage	VBE(sat)	IC=5.0A, IB=1.0A	-	-	1.6	V
Current gain-bandwidth product	fT	VCE=10V, IC=0.5A, f=1MHZ	4	-	-	MHz
Output capacitance	Cob	VCB=10V, IE=0, f=0.1MHz	-	21	-	pF
Turn off time	tS	IB1=-IB2=1.6A, Tp=25μs	-	1.9	2.5	μs

Related Names
Signal Switching Device | High Speed Power Amplifier | Linear Power Supply Parts

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