TCXO
SMD VCTCXO
The SMD VCTCXOcomes with 3.2 ⅹ 2.5 mm² size. The ETXD32 series with voltage control option employsan analogue IC for the oscillator and temperature compensation, the crystalmounted on top of the ceramic is IC carrier. The SMD VCTCXO is extensively used inGPS, GPS Module, Cellular Phone (CDMA&WCDMA) and Broadband Accessapplications.
Electrical Specifications of SMD VCTCXO
| Parameters | Electrical Specifications | ||||||
| MIN | TYP | MAX | UNITS | ||||
| Frequency (Fo) ref: 25℃ | 6.4000-38.4000 | MHz | |||||
| Frequency Stability | Vs. Temperature Range | --2.5 |
| 2.5 | ppm | ||
| Vs. Supply Voltage (±5%) | --0.3 |
| 0.3 | ppm | |||
| Vs. Load (±5%) | --0.3 |
| 0.3 | ppm | |||
| Vs. Aging (at 25℃ ) | --1.0 |
| 1.0 | ppm/year | |||
| Frequency Tolerance at 25℃ | --1.5 |
| 1.0 | ppm | |||
| Operating Temperature Range | -40 |
| 85 | ℃ | |||
| Storage Temperature Range | -40 |
| 90 | ℃ | |||
| Supply Voltage | 2.5 | 3.0 | 3.4 | VDC | |||
| Current Consumption | 1.5 |
| 2.0 | mA | |||
| Output Voltage Level | 0.8 |
|
| Vp-p | |||
| Output Waveform | Clipped Sine |
| |||||
| Output Load | 10k Ω //10pF |
| |||||
| Start-up Time (90% of Vp-p) |
|
| 3.0 | mS | |||
| Phase Noise | 10Hz Carrier Offset |
|
| -86 | dBc/Hz | ||
| 100Hz Carrier Offset |
|
| -110 | dBc/Hz | |||
| 1KHz Carrier Offset |
|
| -130 | dBc/Hz | |||
| 10KHz Carrier Offset |
|
| -144 | dBc/Hz | |||
| 100KHz Carrier Offset |
|
| -144 | dBc/Hz | |||
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