TEC InGaAs APD for OTDR

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Features
Small dark current
Small terminal capacitance
High speed response
High volt / high multiplication factor
Built-in TEC and thermistor
8PIN coaxial cooled package

Applications

OTDR system/other sensing probe

Absolute Maximum Ratings

Parameter	Symbol	Min.	Typ.	Max.	Unit
Forward Current	IF	-	-	10	mA
Reverse Current	IR	-	-	0.5	mA
Operating Case Temp.	TC	-10	-	60	°C
Storage Temperature	TSTG	-40	-	85	°C
TEC Current	Itec	-	-	0.8	A
TEC Voltage	Vc	-	-	2	V
Lead Soldering Temp.	TSOL	-	-	260(10s)	°C
Relative Humidity	RH	0	-	85	%

Optical & Electrical Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Notes
Reverse Breakdown Voltage	VBR	50	55	-	V	ID = 100 μA
Temperature Coefficient of Reverse Breakdown Voltage	δ	-	0.1	-	V/°C	-
Dark Current	ID	0.2	-	1	nA	M = 1, 5V
Multiplied Dark Current	IDM	-	-	5	nA	VR = VBR x 0.98
Terminal Capacitance	Ct	-	0.35	-	pF	-
Multiplication Factor	M	80	100	-	M	1550nm,Ipo=1uw
Cut-off Frequency	fC	2.5	-	-	GHz	M = 10
Responsibly	S	0.85	0.90	-	A/W	λ = 1310 nm, M = 1
Responsibly	S	0.90	0.95	-	A/W	λ = 1550 nm, M = 1
Optical Return Loss	ORL	30	40	-	dB	SMF
Thermistor Resistance	Rt	9.5	-	10.5	KΩ	T=25 °C
Thermistor B Constant	B	-	72	-	K	T=25 °C
TEC Current	IC	-	-	0.5	A	ΔΤ=40°C
TEC Voltage	VC	-	-	1.8	V	ΔΤ=40°C