Small Area InGaAs Photodiode

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The 1100nm-1650nm small area InGaAs photodiode uses an InGaAs detector chip, and features a low power consumption, small dark current, high sensitivity, great linearity, compact design and small volume. The equipment is most commonly used in CATV receivers, power detection equipment and optical signal receivers for analog systems.

Absolute Maximum Ratings

Parameter	Symbol	Ratings	Unit
Storage Temperature	Tstg	~40〜 100	°C
Operating Temperature	Top	-40〜 85	°C
Max Input Power	Pmax	4	dBm
Operating Voltage	Vop	5	V
PD Reverse Voltage	VR(PD)	25	V
Soldering Temp	-	260	°c
Soldering Time	-	10	s

Optical & Electrical Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Wavelength Range	λ	1100	-	1650	nm	-
Power Range	P	-70	-	4	dBm	V=5V
Active Diameter	Ad		75		um	-
Dark Current	Id	-	0.2	0.5	nA	-
Responsivity	R	-	0.85	0.90	A/W	入=1310 nm
Responsivity	R		0.90	0.95	A/W	入=1550 nm
Frequency Bandwidth	Bw	1		2000	MHz
Frequency Response	Fr	-	土 0.5	-	dB
Capacitance	Ct	-	0.65	0.75	Pf	-
Response Time	Tr	0.1	-		ns	-
Return loss	R1			-45	dB
cso cso	-	-	-70	-	dBc	45~860MHz
CTB CTB	-	-	-80	-	dBc	45~860MHz