YZPST Schottky Diode

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The YZPST Schottky diode is designed for general purpose applications, and the metal-semiconductor junction is protected by a guard ring. The low forward voltage drop and the increased switching speed make it the perfect choice to protect MOS device, and this product is also applicable for steering diodes, biasing diodes, coupling diodes, etc.

Absolute Maximum Ratings (TJ=25℃)

Parameter	Part	Symbol	Value	Unit
Peak repetitive reverse voltage	1N5711	VRRM	70	V
Peak repetitive reverse voltage	1N6263	VRWM	60	V
Max. single cycle surge current 10μs square wave	-	IFSM	2.0	A
Power dissipation	-	PD	400	mW
Max. junction temperature	-	TJ	125	℃
Storage temperature range	-	TSTG	-55 to 150	℃

Note:
1. If stress exceeds the maximum rating, the device may get damaged.
2. The maximum ratings are stress ratings only.
3. Functional operation above the recommended operating conditions is not implied.
4. Extended exposure to stress above the recommended operating conditions may affect device reliability.

Electrical Characteristics (TJ=25℃)

Parameter	Symbol	Test condition	Part	Min.	Typ	Max.	Unit
Reverse breakdown voltage	VR	IR=10μA (pulsed)	1N5711	70	-	-	V
Reverse breakdown voltage	VR	IR=10μA (pulsed)	1N6263	60	-	-	V
Leakage current	IR	VR=50V	-	-	-	200	nA
Forward voltage drop	VF	IF=1mA	-	-	-	0.41	V
Forward voltage drop	VF	IF=15mA	-	-	-	1.0	V
Junction capacitance	CJ	VR=0V, f=1MHz	1N5711	-	-	2.0	pF
Junction capacitance	CJ	VR=0V, f=1MHz	1N6263		-	2.2	pF
Reverse recovery time	trr	IF=IR=5mA, recover to 0.1IR		-	-	1.0	ns

Related Names
Schottky Transistor | One Way Diode | Low Power Dissipation Diode

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